Si and SiGe faceting during selective epitaxyPRIBAT, Clément; SERVANTON, Germain; DEPOYAN, Linda et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 865-868, issn 0038-1101, 4 p.Conference Paper

Investigation of interface characteristics in strained-Si nMOSFETsCHENG WEN KUO; SAN LEIN WU; SHOOU JINN CHANG et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 897-900, issn 0038-1101, 4 p.Conference Paper

Defect delineation and characterization in SiGe, Ge and other semiconductor-on-insulator structuresABBADIE, A; ALLIBERT, F; BRUNIER, F et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 850-857, issn 0038-1101, 8 p.Conference Paper

Epitaxial growth of Si:C/Si/SiGe into cavity formed by selective etching of SiGeYAMAMOTO, Yuji; KÖPKE, Klaus; WEIDNER, Günter et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 824-827, issn 0038-1101, 4 p.Conference Paper

Low-frequency noise in buried-channel SiGe n-MODFETsMADAN, Anuj; CRESSLER, John D; KOESTER, Steven J et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 901-904, issn 0038-1101, 4 p.Conference Paper

New method to calibrate the pattern dependency of selective epitaxy of SiGe layersKOLAHDOUZ, M; MARESCA, L; OSTLING, M et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 858-861, issn 0038-1101, 4 p.Conference Paper

A selective epitaxy collector module for high-speed Si/SiGe:C HBTsGEYNET, B; CHEVALIER, P; CHANTRE, A et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 873-876, issn 0038-1101, 4 p.Conference Paper

Photoluminescence study of nanocrystalline-Si(Ge) embedded in mesoporous silicaADNANE, Bouchaib; LAI, Yi-Fan; SHIEH, Jia-Min et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 862-864, issn 0038-1101, 3 p.Conference Paper

Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidationDONG WANG; NAKASHIMA, Hiroshi.Solid-state electronics. 2009, Vol 53, Num 8, pp 841-849, issn 0038-1101, 9 p.Conference Paper

The effects of STI induced mechanical strain on GIDL current in Hf-based and SiON MOSFETsCHENG, C. Y; FANG, Y. K; LIAO, J. C et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 892-896, issn 0038-1101, 5 p.Conference Paper

DC and 1/f noise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing techniqueHAU YU LIN; SAN LEIN WU; SHOOU JINN CHANG et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 905-908, issn 0038-1101, 4 p.Conference Paper

Molecular approaches to p- and n-nanoscale doping of Ge_1-ySn_y semiconductors: Structural, electrical and transport propertiesJUNQI XIE; TOLLE, J; D'COSTA, V. R et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 816-823, issn 0038-1101, 8 p.Conference Paper